NT5CB256M8GN-CG是南亞(NANYA)公司推出的一款2GB DDR3 同步動(dòng)態(tài)RAM,該芯片除按照DDR3 DRAM特性進(jìn)行設(shè)計(jì)外,所有的控制及地址輸入都能與外部提供的時(shí)鐘保持同步。在一般應(yīng)用程序數(shù)據(jù)傳輸中,其DDR傳輸速率可高達(dá)1600Mb/sec/pin。該芯片主要適用于需大量存儲密度和高帶寬的主內(nèi)存的應(yīng)用程序。(更多詳情)
NT5CB256M8GN-CG的采購信息如下:
NT5CB256M8GN-CG的主要功能特性包括:
1、VDD = VDDQ = 1.5V ± 0.075V (JEDEC Standard Power Supply)
2、VDD = VDDQ = 1.35V -0.0675V/+0.1V (Backward Compatible to VDD = VDDQ = 1.5V±0.075V)
3、8 Internal memory banks (BA0- BA2)
4、Differential clock input (,)
5、Programmable ? Latency ():5, 6, 7, 8, 9, 10, 11
6、WRITE Latency (CWL): 5,6,7,8,9
7、POSTED CAS ADDITIVE Programmable Additive Latency (AL): 0, CL-1, CL-2 clock
8、Programmable Sequential / Interleave Burst Type Through ZQ pin (RZQ:240 ohm±1%)
9、Programmable Burst Length:4, 8
10、8n-bit prefetch architecture
11、Output Driver Impedance Control
12、Differential bidirectional data strobe
13、Internal(self) calibration:Internal self calibration
14、OCD Calibration
15、Dynamic ODT (Rtt_Nom & Rtt_WR)
16、Auto Self-Refresh
17、Self-Refresh Temperature
18、RoHS compliance and Halogen free
19、Packages:78-Balls BGA for x4, x8 components
NT5CB256M8GN-CG的功能框圖如下:
NT5CB256M8GN-CG的管腳圖如下:
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