K4B4G1646B是SAMSUNG電子公司推出的一款DDR3同步動(dòng)態(tài)隨機(jī)存取記憶體。該芯片對一般通用設(shè)備的傳輸速率就能達(dá)到2133Mb/sec/pin (DDR3-2133) ，它具有可編程CWL ，內(nèi)置電容、終止端ODT、異步重啟等DDR3 SDRAM特征，其主要應(yīng)用于：通用計(jì)算設(shè)備，如臺(tái)式機(jī)和筆記本電腦，主記憶體等。
K4B4G1646B的采購信息如下：
K4B4G1646B的主要功能特性包括：
1、JEDEC standard 1.5V(1.425V~1.575V)
2、VDDQ = 1.5V(1.425V~1.575V)
3、400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin,
4、667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin,
5、933MHz fCK for 1866Mb/sec/pin, 1066 MHz fCK for 2133Mb/sec/pin
6、8 Banks
7、Programmable CAS Latency(posted CAS): 5,6,7,8,9,10,11,12,13,14
8、Programmable Additive Latency: 0, CL-2 or CL-1 clock
9、Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333) , 8 (DDR3-1600), 9 (DDR3-1866) and 10 (DDR3-2133)
10、8-bit pre-fetch
11、Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only),4 with tCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]
12、Bi-directional Differential Data-Strobe
13、Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
14、On Die Termination using ODT pin
15、Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C
16、Support Industrial Temp ( -40 ～ 85°C )
17、Asynchronous Reset
18、Package：96 balls FBGA - x16
19、All of Lead-Free products are compliant for RoHS
20、All of products are Halogen-free
K4B4G1646B的管腳圖如下：
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